Range and damage distribution in cluster ion implantation
- Kyoto Univ., Sakyo, Kyoto (Japan). Ion Beam Engineering Experimental Lab.
- Fujitsu Labs. Ltd., Atsugi (Japan)
Cluster ion implantation is an attractive alternative to conventional ion implantation, particularly for shallow junction formation. It is easy to obtain high current ion beams with low equivalent energy using cluster ion beams. The implanted boron distribution in 5 keV B{sub 10}H{sub 14} implanted Si is markedly shallower than that in 5 keV BF{sub 2} ion implanted Si. The implanted depth is less than 0.04 {micro}m, indicating that cluster ion implantation is capable of forming shallow junctions. The sheet resistance of 3 keV B{sub 10}H{sub 14} implanted samples falls below 500 {Omega}/sq after annealing at 1,000 C for 10s. Shallow implantation can be realized by a high energy cluster beam without space-charge problems in the incident beam. Defect formation, resulting from local energy deposition and multiple collisions, is unique for cluster ions. The thickness of the damaged layer formed by cluster ion bombardment increases with the size of the cluster, if implant energy and ion dose remain constant. This is one of the nonlinear cluster effects, which may allow some control over the implant damage distributions that accompany implanted ions, and which have been shown to have a great effect on dopant redistribution during annealing.
- OSTI ID:
- 549787
- Report Number(s):
- CONF-961202-; ISBN 1-55899-342-8; TRN: 98:000439
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Materials modification and synthesis by ion beam processing; Alexander, D.E. [ed.] [Argonne National Lab., IL (United States)]; Cheung, N.W. [ed.] [Univ. of California, Berkeley, CA (United States)]; Park, B. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Skorupa, W. [ed.] [Research Center Rossendorf, Inc., Dresden (Germany)]; PB: 748 p.; Materials Research Society symposium proceedings, Volume 438
- Country of Publication:
- United States
- Language:
- English
Similar Records
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F