Investigation of radiation defects in gallium arsenide under hydrostatic pressure
The spectral characteristics of gallium arsenide photodiodes irradiated with electrons (2 MeV, 300/sup 0/K) were used to study the influence of hydrostatic compression (up to 8 kbar) and temperature (77--300/sup 0/K) on the energy positions of radiation-defect levels. The pressure coefficients of the spectral positions of the impurity absorption bands at 1.2 and 1.37 eV indicated a genetic relationship between localized states H/sub 0/ (approx.E/sub v/+0.1 eV) and H/sub 1/ (approx.E/sub v/+0.25 eV) and the band extrema E/sub v/(GAMMA/sub 15/) and E/sub c/(GAMMA/sub 1/), respectively. The high piezoresistance coefficient (1/rho)(drho/dP)approx. =3.5 x 10/sup -4/ bar/sup -1/, recorded for the first time for n-type GaAs compensated by electron irradiation, was attributed to the influence of a state split off from the valence band and located in the upper half of the band gap at E/sub c/-0.3--0.4 eV. Isochronous annealing of radiation defects was investigated in the temperature range 300--35/sup 0/K.
- Research Organization:
- V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk
- OSTI ID:
- 5478328
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 14:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
ELECTRON COLLISIONS
ENERGY LEVELS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE 01-10
PRESSURE DEPENDENCE
VERY HIGH PRESSURE
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL STRUCTURE
ENERGY RANGE
GALLIUM COMPOUNDS
MEV RANGE
PNICTIDES
RADIATION EFFECTS
360605* - Materials- Radiation Effects