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Title: Electronic structure and relaxed geometry of the TiO[sub 2] rutile (110) surface

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1];  [2];  [3]
  1. Institute of Physical Chemistry, Waehringerstrasse 42, A-1090 Vienna (Austria)
  2. Institute de Physique Experimentale, Universite de Lausanne, CH-1015, Dorigny-Lausanne (Switzerland)
  3. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

The [ital ab] [ital initio] full-potential linearized-augmented-plane-wave method for a free-slab geometry was used to calculate the electronic structure and geometry of a clean TiO[sub 2] (110) rutile surface. Surface induced states were found in the density of states, such as an [ital s]-like surface state at [minus]15 eV. Band bending states of width 0.5 eV appear just below the Fermi energy, in agreement with photoemission experiments. The positions of the atoms in the surface and subsurface layers and the corresponding change of Ti-O bond lengths were derived by total-energy minimization. In general, downward relaxations were obtained for which the fivefold-coordinated Ti experienced the largest relaxation of [minus]0.180 A, whereas the second most important relaxation effect, [minus]0.156 A, occurred for the surface O. The calculated Ti-O bond lengths are in very good agreement with experimental data for the TiO[sub 2] (100) surface. The calculated work function 6.79 eV compares favorably with the experimental result of 6.83 eV. Based on an extension of density-functional theory to excited states the valence- and conduction-band gap was calculated to be 1.99 eV, which is in reasonable agreement with the experimental gap of 2.6 eV when compared to the one-particle band gap of 0.65 eV.

DOE Contract Number:
FG02-88ER45372
OSTI ID:
5446618
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 49:3; ISSN 0163-1829
Country of Publication:
United States
Language:
English