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Title: Photochemically volatilized polysilanes: a new class of self-developing deep uv resists

Conference ·
OSTI ID:5444911

A resist material which combines high short-wavelength sensitivity, ''self-development'' (i.e., generation of the resist image directly upon exposure), and resistance to dry-etching procedures is a major goal. While sensitive self-developing materials are known for use in the deep-uv, e.g., poly(olefin sulfones) reported by Bowden and coworkers and sensitized end-capped poly(phthalaldehyde), their resistance to plasma etchants is marginal. A number of groups have reported the direct deep-uv laser etching of a variety of organic polymeric materials, but exposures of >1 J/cm/sup 2/ are required for removal of a 1 ..mu.. thick film in these cases. In this paper, we describe a new class of alkyl polysilane copolymers which exhibit relatively efficient self-developing behavior and have excellent resistance to O/sub 2/ reactive ion etchants. Films of these new polysilanes 1 ..mu.. in thickness can be completely photochemically volatilized to give submicron feature resolution at total exposures of 500 to 1000 mJ/cm/sup 2/ of deep-uv from a KrF excimer laser (248 nm) or low-pressure Hg lamp (254 nm). 13 refs., 3 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5444911
Report Number(s):
SAND-85-0920C; CONF-850942-11; ON: DE85010655
Resource Relation:
Conference: 190. American Chemical Society national meeting, Chicago, IL, USA, 8 Sep 1985
Country of Publication:
United States
Language:
English

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