Photochemically volatilized polysilanes: a new class of self-developing deep uv resists
A resist material which combines high short-wavelength sensitivity, ''self-development'' (i.e., generation of the resist image directly upon exposure), and resistance to dry-etching procedures is a major goal. While sensitive self-developing materials are known for use in the deep-uv, e.g., poly(olefin sulfones) reported by Bowden and coworkers and sensitized end-capped poly(phthalaldehyde), their resistance to plasma etchants is marginal. A number of groups have reported the direct deep-uv laser etching of a variety of organic polymeric materials, but exposures of >1 J/cm/sup 2/ are required for removal of a 1 ..mu.. thick film in these cases. In this paper, we describe a new class of alkyl polysilane copolymers which exhibit relatively efficient self-developing behavior and have excellent resistance to O/sub 2/ reactive ion etchants. Films of these new polysilanes 1 ..mu.. in thickness can be completely photochemically volatilized to give submicron feature resolution at total exposures of 500 to 1000 mJ/cm/sup 2/ of deep-uv from a KrF excimer laser (248 nm) or low-pressure Hg lamp (254 nm). 13 refs., 3 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5444911
- Report Number(s):
- SAND-85-0920C; CONF-850942-11; ON: DE85010655
- Resource Relation:
- Conference: 190. American Chemical Society national meeting, Chicago, IL, USA, 8 Sep 1985
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
COPOLYMERS
MASKING
PHOTOCHEMISTRY
SILANES
ABSORPTION SPECTRA
EMISSION SPECTRA
ETCHING
KRYPTON FLUORIDE LASERS
OXIDATION
SENSITIVITY
CHEMICAL REACTIONS
CHEMISTRY
EXCIMER LASERS
GAS LASERS
HYDRIDES
HYDROGEN COMPOUNDS
LASERS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
ORGANIC SILICON COMPOUNDS
POLYMERS
SILICON COMPOUNDS
SPECTRA
SURFACE FINISHING
400201* - Chemical & Physicochemical Properties