Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

Book · Sat Nov 01 00:00:00 EST 1997

OSTI ID:541104

Gencer, A H; Dunham, S T ^[1]

---

1. Boston Univ., MA (United States). Dept. of Electrical and Computer Engineering

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

• OSTI ID: 541104
• Report Number(s): CONF-961202-; ISBN 1-55899-343-6; TRN: 97:019612
• Resource Relation: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Microstructure evolution during irradiation; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Was, G.S. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Hobbs, L.W. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; Diaz de la Rubia, T. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 752 p.; Materials Research Society symposium proceedings, Volume 439
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ION IMPLANTATION
SILICON
AMORPHOUS STATE
ANNEALING
MATHEMATICAL MODELS
CRYSTAL DEFECTS
PHYSICAL RADIATION EFFECTS
THEORETICAL DATA