MOVPE growth of high performance photodetector structures using TBA and TBP
- Alcatel Telecom, Stuttgart (Germany). Research Div.
Tertiary-butyl-arsine (TBA) and tertiary-butyl-phosphine (TBP) are common alternative group V precursors for the replacement of the highly toxic arsine and phosphine. The authors demonstrate, that high performance devices like pin-photodetectors grown with TBA and TBP show excellent device characteristics. Extremely low dark currents of I{sub D} < 100 pA at {minus}5 V are found for 55 {micro}m planar pin-photodiodes with an yield of 99%. Also planar 300 {micro}m diodes and mesa pin photodetectors (40 {micro}m) were processed and investigated. In both cases very low dark currents of I{sub D} < 0.6 nA at {minus}5 V were measured. Beside safety aspects, the improvements in device properties together with high yields (>95%) demonstrate the suitability of TBA and TBP for the growth of high performance pin-photodetectors.
- OSTI ID:
- 536200
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%39
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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