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Title: Research on application of arc-plasma spraying (APS). Final report, September 18, 1978-February 28, 1982

Technical Report ·
OSTI ID:5357006

The work described is aimed is aimed at applying arc plasma spraying (APS) to three solar energy applications, namely fabrication of silicon solar cells from polycrystalline silicon layers deposited by arc plasma spraying on suitable substrates; preparation of selective absorber surfaces for solar thermal energy absorbers by arc plasma spraying semiconductors over metal (aluminum, steel, etc.) substrates, and fabrication of inexpensive, durable ohmic contacts to single crystal and polycrystalline solar cells by arc plasma spraying appropriate metals and alloys onto both the light receiving and back surfaces of the photovoltaic device. To summarize briefly, the most successful of the three activities was that aimed at making ohmic contacts by arc plasma spraying; it requires additional work to establish commercial viability, but its technical feasibility has been demonstrated. The conditions for reproducibly depositing adherent layers of arc plasma sprayed silicon onto metal and graphite layers were established and devices which exhibited a weak PV effect were made from these polycrystalline APS silicon layers; however, problems caused by the small grain size and high resistivity of these APS Si layers must be solved before they can be made into good PV devices. Silicon layers deposited on metal substrates by arc plasma spraying had their integrated reflectance measured; their a/e ratio and absorption for solar radiation were calculated but neither of these parameters had a sufficiently high value to give APS Si layers an advantage over other proposed selective absorber surfaces.

Research Organization:
Solamat, Inc., East Providence, RI (USA)
DOE Contract Number:
AC02-78ER04749
OSTI ID:
5357006
Report Number(s):
DOE/ER/04749-T1; ON: DE82015220
Resource Relation:
Other Information: Portions of document are illegible
Country of Publication:
United States
Language:
English