Excess currents in MINP-type solar cells
MINP silicon solar cells with up to 16.5-percent efficiency have been fabricated using an ion-implanted shallow n-layer followed by a 20-25 A insulator and low work-function metal grid. This design reduces surface recombination, suppresses dark current, and gives increased UV spectral response. Current-voltage data, in the dark and under AM1 illumination, have been taken from 90 to 375K for four different designs. These data lead to determination of the excess-current component which, in some cases, gives a linear semilogarithmic behavior over much of the voltage range and an ideality factor which increases with decreasing temperature. These trends suggest a current component governed by field emission at the MIS interface and on the solar-cell edges. Control of this current in other cells gave great improvement in efficiency. Much of this excess-current component is eliminated by careful attention to the edges of the solar cell, leaving a small field-emission component under the MIS contact. High-efficiency passivated N/P cells show a small recombination component of excess current.
- Research Organization:
- Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst
- OSTI ID:
- 5349148
- Journal Information:
- IEEE Trans. Electron Devices; (United States), Vol. ED32:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
MIS SOLAR CELLS
FIELD EMISSION
PHOTOCURRENTS
SILICON SOLAR CELLS
DESIGN
EFFICIENCY
ELECTRIC POTENTIAL
ILLUMINANCE
ION IMPLANTATION
LOW TEMPERATURE
MEDIUM TEMPERATURE
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
RECOMBINATION
SPECTRAL RESPONSE
TEMPERATURE EFFECTS
ULTRAVIOLET SPECTRA
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
EMISSION
EQUIPMENT
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
140501* - Solar Energy Conversion- Photovoltaic Conversion