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Title: Excess currents in MINP-type solar cells

Journal Article · · IEEE Trans. Electron Devices; (United States)

MINP silicon solar cells with up to 16.5-percent efficiency have been fabricated using an ion-implanted shallow n-layer followed by a 20-25 A insulator and low work-function metal grid. This design reduces surface recombination, suppresses dark current, and gives increased UV spectral response. Current-voltage data, in the dark and under AM1 illumination, have been taken from 90 to 375K for four different designs. These data lead to determination of the excess-current component which, in some cases, gives a linear semilogarithmic behavior over much of the voltage range and an ideality factor which increases with decreasing temperature. These trends suggest a current component governed by field emission at the MIS interface and on the solar-cell edges. Control of this current in other cells gave great improvement in efficiency. Much of this excess-current component is eliminated by careful attention to the edges of the solar cell, leaving a small field-emission component under the MIS contact. High-efficiency passivated N/P cells show a small recombination component of excess current.

Research Organization:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst
OSTI ID:
5349148
Journal Information:
IEEE Trans. Electron Devices; (United States), Vol. ED32:4
Country of Publication:
United States
Language:
English