Incoherent-light-flash annealing of phosphorus-implanted silicon
Incoherent light pulses emitted from a xenon flash lamp were used to anneal radiation damage in (100) silicon implanted with 2 x 10/sup 15/ /sup 31/P/sup +//cm/sup 2/ at 100 keV. Electrical carrier concentration has been determined by means of differential sheet resistivity and Hall effect together with the anodic oxidation stripping technique; the surface photovoltage technique has been used to evaluate bulk lifetime and Rutherford backscattering and transmission electron microscopy for analysis of radiation damage. Damage recovery appears to take place via a solid phase epitaxial process. Electrical activity and carrier mobility values of samples annealed by incoherent light are similar to those obtained by laser, electron beam, and furnace annealing. The bulk lifetime of minority carriers is not degraded.
- Research Organization:
- Laboratorio LAMEL, Consiglio Nazionale delle Ricerche, Via de' Castagnoli 1, 40126 Bologna, Italy
- OSTI ID:
- 5314435
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 37:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
ANNEALING
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
CARRIER MOBILITY
CHARGE CARRIERS
DAMAGE
ELECTRIC CONDUCTIVITY
GAS LASERS
HALL EFFECT
LASER-RADIATION HEATING
PHOSPHORUS IONS
PHOTOVOLTAIC EFFECT
PULSES
QUANTITY RATIO
RUTHERFORD SCATTERING
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
ATOMIC IONS
CHARGED PARTICLES
ELASTIC SCATTERING
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
HEATING
IONS
LASERS
MATERIALS
MICROSCOPY
MOBILITY
PHYSICAL PROPERTIES
PLASMA HEATING
RADIATION EFFECTS
SCATTERING
SEMIMETALS
360605* - Materials- Radiation Effects