Susceptibility of Si:P across the metal-insulator transition. I. Diamagnetism

Journal Article · Fri Apr 01 00:00:00 EST 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.37.5522· OSTI ID:5310965

Roy, A; Turner, M; Sarachik, M P

We have made static susceptibility measurements at temperatures between 1.25 and 300 K on samples of phosphorus-doped silicon with dopant concentrations in the range 0.2<1.3, where n/sub c/ is the critical concentration for the metal-insulator transition. In this paper we discuss our results for the diamagnetism associated with the donor electrons. We find that the donor susceptibility above 60 K is diamagnetic and varies linearly with concentration. We associate the susceptibility observed at these temperatures with a diamagnetic term, chi/sub D/(T,n), which is of the Landau-Peierls-Pauli type, but which is linear in n. Using static susceptibility data at higher concentrations obtained by other investigators, we show that the linear behavior of chi/sub D/ persists up to approx.3n/sub c/, i.e., within the entire impurity-''band'' region, beyond which it reverts to the n/sup 1/3/ behavior expected for a standard band. We find that published ESR susceptibility data for similar concentrations exhibit the same concentration dependence as chi/sub D/. Use of the ESR data has enabled us to separate out the orbital and spin contributions to the susceptibility. The average diamagnetic susceptibility per donor is found to agree with calculated values of the Larmor diamagnetism of localized electrons, and is independent of concentration over a range spanning the transition from insulating to metallic behavior; so far as the average orbital contribution of the donor electrons in the impurity ''band'' is concerned, it makes little difference whether the electrons are in localized or extended states.

• Research Organization: Department of Physics, City College of the City University of New York, New York, New York 10031
• OSTI ID: 5310965
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 37:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
DIAMAGNETISM
MAGNETIC SUSCEPTIBILITY
DOPED MATERIALS
ELECTRON SPIN RESONANCE
LOW TEMPERATURE
MEDIUM TEMPERATURE
PHOSPHORUS ADDITIONS
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
ALLOYS
ELEMENTS
MAGNETIC PROPERTIES
MAGNETIC RESONANCE
MAGNETISM
MATERIALS
PHYSICAL PROPERTIES
RESONANCE
SEMIMETALS
360603* - Materials- Properties