Ion implantation induced swelling in 6H-SiC
- CNR-Istituto LAMEL, Via P. Gobetti 101, I-40129 Bologna (Italy)
- GNSM-INFM, Dipartimento di Fisica G. Galilei, Universita degli Studi di Padova, via Marzolo 8, I-35131 Padova (Italy)
Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al{sup +} ions in the dose range 1.25{times}10{sup 14}{endash}3{times}10{sup 15}ionscm{sup {minus}2}. Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 529996
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 25; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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