cw electro-optical characteristics and preliminary reliability of double-heterostructure GaAs-Al/sub x/Ga/sub 1-x/As lasers grown by molecular beam epitaxy

Journal Article · Tue Jul 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91800· OSTI ID:5294846

Tsang, W T; Hartman, R L; Elder, H E; Holbrook, W R

The cw threshold currents and total forward series resistances of the proton-bombarded stripe-geometry lasers fabricated from GaAs-Al/sub 0.3/Ga/sub 0.7/As double-heterostructure (DH) wafers grown by molecular beam epitaxy (MBE) are at least as low as those similar-geometry lasers grown by liquid phase epitaxy. Yields for such laser diodes of > or approx. =90% were obtained. Randomly picked diodes fabricated from an early MBE DH wafer having a 0.4-..mu..m GaAs active layer have operated continuously at a constant output power of approx.2 mW/mirror in a approx.38 /sup 0/C dry-nitrogen ambient for more than 13 000 h and are still operating.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5294846
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 37:2
• Country of Publication: United States
• Language: English

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42 ENGINEERING
SEMICONDUCTOR LASERS
ELECTRICAL PROPERTIES
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ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
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