Laser interference structuring of a-Si:H
- Technische Univ. Muenchen, Garching (Germany). Walter Schottky Institut
There is an increasing demand for new structuring techniques in semiconductor device technology due to novel geometric architectures of devices like lasers, high electron mobility transistors (HEMTs), large area flat panel displays and many more. Laser interference structuring with a pulsed Nd:YAG laser set-up is introduced and typical geometric dimensions and limitations are discussed. Intensity modulated laser beams are used to recrystallize amorphous silicon layers periodically at the intensity maxima. Stripe or tip structures of multi-crystalline (mc) silicon with sub-micrometer dimensions are shown. Structural, electronic and optical properties of the mc-Si structures are discussed. A hybrid thin film p-i-n solar cell architecture is described where the textured TCO is replaced by a flat TCO and a laterally structured boron doped mc-Si window layer. Light trapping, light diffraction and higher internal electric fields are proposed to be the main advantages of such a solar cell.
- OSTI ID:
- 527622
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%50
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical modeling of amorphous silicon based solar cells on flat and textured substrates
Plasma Texturing of Silicon Solar Cells