H{sub 2}-dilution vs. buffer layers for increased V{sub oc}
- Univ. de Neuchatel (Switzerland). Inst. de Microtechnique
Hydrogen dilution and buffer layers, as two ways to obtain higher V{sub oc} values in a-Si:H p-i-n solar cells, are directly compared in the present study. Special emphasis is laid on stability against light soaking. H{sub 2}-dilution in combination with lower substrate temperature yields higher V{sub oc} values and better stability as compared to buffer layers. However, light absorption is decreased due to the increased gap in H{sub 2}-diluted cells. The stability of buffer layer cells can remarkably be ameliorated by boron doping and H{sub 2}-dilution of the a-SiC:H buffer layer. However, stabilized efficiency is higher for optimized diluted cells than for cells with a buffer layer. An a-Si/a-Si stacked cell with a graded dilution for both cells yielded 10% initial efficiency with 17% relative degradation. Diluted a-Si:H cells at lower temperature become specially interesting in combination with a microcrystalline bottom cell. For such a micromorph tandem cell the authors obtained 11.4% initial efficiency.
- OSTI ID:
- 527615
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%43
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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