(111) random and <110> channeled implantation profiles and range parameters in Hg/sub 1/. sqrt. /sub x/Cd/sub x/Te

Journal Article · Wed Jun 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340394· OSTI ID:5253046

Wilson, R G

We have measured, using secondary-ion mass spectrometry, the (111) random and <110> channeled profiles for about 45 ions implanted into Hg/sub 1/..sqrt../sub x/Cd/sub x/Te. Ion energies vary from 100 to 700 keV, and ion fluences from 1 x 10/sup 13/ to 3 x 10/sup 15/ cm/sup -2/. The specially preannealed device-quality Hg/sub 1/..sqrt../sub x/Cd/sub x/Te substrates were implanted at room temperature and not annealed after implantation. Ions implanted include /sup 1/H(C), /sup 2/H(C), He, Li(C), Be(C), B(C), C(C), N(C), O(C), F(C), Na(C), Mg(C), Al(C), Si(C), P(C), S(C), Cl(C), K(C), Ca(C), Ti(C), V, Cr(C), Mn(C), Fe(C), Co(C), Ni, Cu(C), Zn, Ga, Ge, As, Se, Br(C), Kr, Rb, Zr, Mo(C), Ag, In(C), Sn, Sb, Cs, and Ta, where (C) means that <110> channeled profiles were measured in addition to (111) random orientation profiles. Other ions were implanted but with poor profiling results. We report here implantation range data that include the peak depth R/sub m/, the projected range R/sub p/ or first moment ..mu.., the range straggle ..delta..R/sub p/ or second moment sigma, the third moment or skewness ..gamma../sub 1/, and the fourth moment or kurtosis ..beta../sub 2/, obtained from a Pearson IV fitting routine, and the maximum <110> channeling range. We show what densities and depths can be achieved using <110> channeled implantation in solid-state recrystallized Hg/sub 1/..sqrt../sub x/Cd/sub x/Te. Values of electronic stopping S/sub e/ are calculated from the maximum <110>channeling ranges and show the Z/sub 1/-dependent nature of S/sub e/.

• Research Organization: Hughes Research Laboratories, Malibu, California 90265
• OSTI ID: 5253046
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
PHYSICAL RADIATION EFFECTS
MERCURY TELLURIDES
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
ION CHANNELING
ION IMPLANTATION
MASS SPECTROSCOPY
SUBSTRATES
CADMIUM COMPOUNDS
CHALCOGENIDES
CHANNELING
DATA
INFORMATION
MERCURY COMPOUNDS
NUMERICAL DATA
RADIATION EFFECTS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
360605* - Materials- Radiation Effects