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Title: Thin detectors for the CHICSi {delta}E-E telescope

Conference ·
OSTI ID:512967
;  [1]
  1. SINTEF Electronics and Cybernetics, Oslo (Norway); and others

A pilot series of 10 {mu}m to 15 {mu}m thin silicon detectors has been made for the AE-E telescopes in the CHICSi experiment at the Celsius Heavy Ion Collider in Uppsala, Sweden. AE-E telescopes provide ion type identification and energy determination of collision fragments. The thin detectors are made as p-i-n diodes in thin etched membranes on 280 {mu}m thick silicon wafers. The membranes are made with anisotropic etching using 25 w% tetramethylammonium hydroxide (TMAH) solution. The etch speed of this solution is very uniform across a wafer. As a result detectors with uniform thickness can be produced. The etch depth varies with less than 0.3 {mu}m and the surface roughness is in the 2 - 4 nm range. Each detector has a 10.0 x 10.0 mm{sup 2} active area on a 10.2 x 10.2 mm{sup 2} membrane surrounded by a 1.1 mm wide supporting frame. The detectors have active area leakage currents of approximately 0.5 nA at 20 V. The breakdown voltage of the detectors is above 100 V. Test experiments with telescopes consisting of a thin detector in combination with a thick detector have shown excellent ion separation capabilities. Isotope separation of the isotope {sup 7}Be and the isotopes {sup 9}Be and {sup 10}Be can be seen.

OSTI ID:
512967
Report Number(s):
CONF-961123-; TRN: 97:014027
Resource Relation:
Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Anaheim, CA (United States), 2-9 Nov 1996; Other Information: PBD: 1996; Related Information: Is Part Of 1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3; Del Guerra, A. [ed.]; PB: 2138 p.
Country of Publication:
United States
Language:
English

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