Quasi-Newton and multigrid methods for semiconductor device simulation
Technical Report
·
OSTI ID:5116546
A finite difference approximation to the semiconductor device equations using the Bernoulli function approximation to the exponential function is described, and the robustness of this approximation is demonstrated. Sheikh's convergence analysis of Gummel's method and quasi-Newton methods is extended to a nonuniform mesh and the Bernoulli function discretization. It is proved that Gummel's method and the quasi-Newton methods for the scaled carrier densities and carrier densities converge locally for sufficiently smooth problems.
- Research Organization:
- Illinois Univ., Urbana (USA). Dept. of Computer Science
- DOE Contract Number:
- AC02-76ER02383
- OSTI ID:
- 5116546
- Report Number(s):
- UIUCDCS-R-83-1154; UILU-ENG-83-1734; COO-2383-0102; ON: DE84008487
- Resource Relation:
- Other Information: Portions are illegible in microfiche products. Thesis
- Country of Publication:
- United States
- Language:
- English
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