Chemical vapor deposition of titanium{endash}silicon{endash}nitride films
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1084 (United States)
Titanium{endash}silicon{endash}nitride films were grown by metal-organic chemical vapor deposition. At temperatures between 300 and 450{degree}C, tetrakis(diethylamido)titanium, ammonia, and silane react to form films with average compositions near the TiN{endash}Si{sub 3}N{sub 4} tie line and low impurity contents (C{lt}1.5at.{percent}, H between 5 and 15 at.{percent}, with no other impurities present). The film resistivity is a strong function of Si content in the films, ranging continuously from 400 {mu}{Omega}cm for pure TiN up to 1 {Omega}cm for films with 25 at.{percent} Si. Step coverages of approximately 75{percent} on 0.35 {mu}m, 3:1 aspect ratio trenches, and 35{percent}{endash}40{percent} on 0.1{mu}m/10:1 trenches are found for films with resistivities below 1000 {mu}{Omega}cm. These films are promising candidates for diffusion barriers in microelectronic applications. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 508948
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 23; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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