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Title: Determination of silicon in thin-film aluminum on a silicon substrate

Journal Article · · Anal. Chem.; (United States)
DOI:https://doi.org/10.1021/ac50061a063· OSTI ID:5077227

One aspect of microelectronics fabrication technology involves metallization of integrated circuits with a thin layer (1 ..mu..m) of aluminum containing a small amount of silicon, which helps prevent diffusion of the aluminum into the substrate. Quality control of the metallization process necessitated development of a technique for the determination of silicon (0 to 3 wt %) in a thin aluminum layer on a silicon substrate. Emphasis was therefore placed on developing a wet chemical technique by which the thin aluminum films could be selectively etched without sampling the silicon substrate and by which the 5 to 150 ..mu..g of solubilized silicon could be reliably determined. By depositing a thin coating of silicon nitride on the silicon substrate prior to the deposition of the silicon-containing aluminum film, a chemically-resistant (i.e., passive) substrate was formed from which the aluminum layer could be selectively etched. The aluminum film is then etched with sodium hydroxide. In the silicon determination procedure the etched solution is first acidified with hydrochloric acid, and ammonium molybdate solution is added to form silicomolybdic acid H/sub 4/SiO/sub 4/(MoO/sub 3/)/sub 12/, which is extracted into 1-butanol. The organic phase is then analyzed for the 12 molybdate atoms associated with each silicon atom by flame atomic absorption spectrometry. Over a hundred samples were analyzed for silicon by the above procedure and the silicon content was found to range from 8 ..mu..g to 130 ..mu..g.

Research Organization:
Sandia National Labs., Albuquerque, NM
DOE Contract Number:
AC04-76-DP00789
OSTI ID:
5077227
Journal Information:
Anal. Chem.; (United States), Vol. 52:11
Country of Publication:
United States
Language:
English