MIS solar cells with highly doped base materials

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5050918

Munz, P; Schultheiss, R

In an attempt to increase the open-circuit voltage of silicon MIS solar cells the dependence on base resistivity was investigated. Minority carrier MIS cells were prepared using the conceptionally simple semitransparent metal layer approach with single and polycrystalline silicon base materials within the range from 7 ..cap omega..cm down to 0.05 ..cap omega..cm. The type of barrier metal and procedure used made possible the formation of a high potential barrier in the MIS junction over the whole range of doping levels investigated. An increase in the opencircuit voltage of about 80 mV was obtained by using low resistivity base materials, leading to a maximum of 627 mV (100 mW/cm/sup 2/, 25/sup 0/C) with single crystal silicon and a maximum of 595 mV with polycrystalline silicon. The results obtained seem to be of special relevance for new solar grade polycrystalline base materials with inherent high boron doping levels as obtained by metallurgical processes.

• Research Organization: Universitat Konstanz, Fakultat fur Physik, D-7750 Konstanz
• OSTI ID: 5050918
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
MIS SOLAR CELLS
DOPED MATERIALS
ELECTRIC POTENTIAL
SILICON SOLAR CELLS
BORON
MONOCRYSTALS
PERFORMANCE
PHOTOCONDUCTIVITY
POLYCRYSTALS
CRYSTALS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion