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Title: Development of NbN Josephson Junction technology. Final report, 14 September 1985-15 June 1986

Technical Report ·
OSTI ID:5025888

A novel process suitable for fabricating superconducting circuitry based on the all-refactory material NbN is described. In this process, and in-situ trilayer film composed of NbN/MgO/NbN is used to fabricate Josephson tunnel junctions. Reactive ion-etching processes are used to delineate devices and pattern insulators and metallizations. Fabricated junctions yielded good tunneling characteristics with reasonable current-density uniformity and reproducibility. Devices with gap voltages close to 3mV were achieved for high-quality junctions (Vm > 20 mV). In addition to the trilayer, there are two wiring layers, two resistor depositions, and two insulation layers, constituting a full NbN-based fabrication technology. Using this process, the author fabricated and successfully tested thin-film DC SQUID and time-domain reflectometer (TDR) circuits. Preliminary measurements suggest that the critical temperature of these circuits is well within the operating temperature of commercial two-stage closed-cycle refrigerators.

Research Organization:
Hypress, Inc., Elmsford, NY (USA)
OSTI ID:
5025888
Report Number(s):
AD-A-171067/2/XAB
Country of Publication:
United States
Language:
English