{ital Ab initio} study of charge transfer in low-energy collisions of Si{sup 4+} with helium

Journal Article · Sat Feb 01 00:00:00 EST 1997 · Physical Review A

DOI:https://doi.org/10.1103/PhysRevA.55.1064· OSTI ID:488757

Stancil, P C; Zygelman, B ^[1]; Clarke, N J; Cooper, D L ^[2]

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1. W. M. Keck Laboratory for Computational Physics, Department of Physics, University of Nevada Las Vegas, Las Vegas, Nevada 89154-4002 (United States)
2. Department of Chemistry, University of Liverpool, P. O. Box 147, Liverpool L69 3BX (United Kingdom)

We present state-dependent and total charge transfer cross sections for the process Si{sup 4+}(2p{sup 6})+He(1s{sup 2}){r_arrow}Si{sup 3+}(3l)+He{sup +}(1s), where l=s,p, in the collision energy range 0.004{endash}10 eV/amu. The cross sections are determined using a close-coupled quantal method. Fully {ital ab initio} adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond method are incorporated. Rate coefficients for temperatures between 1000 and 50000 K and results for isotopic {sup 3}He are also presented. Astrophysical applications are briefly discussed. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 488757
• Journal Information: Physical Review A, Vol. 55, Issue 2; Other Information: PBD: Feb 1997
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
SILICON IONS
ION-ATOM COLLISIONS
CHARGE EXCHANGE
HELIUM
CROSS SECTIONS
HELIUM 3
S STATES
MATRIX ELEMENTS
TEMPERATURE RANGE OVER 4000 K
COUPLING
ELECTRONIC STRUCTURE
ENERGY GAP