Theoretical studies on the dispersion of the nonlinear optical susceptibilities in GaAs, InAs, and InSb
The nonlinear optical susceptibilities, vertical-bar x$sup 2$14(2wvertical-bar for second-harmonic generation of GaAs, InAs, and InSb in the range 0.05 less than or equal to 3.0 eV are calculated from the band structure obtained by the empirical pseudopotential method. The spin-orbit interaction has been taken into account, and the transitions from the top four valence bands to the bottom four conduction bands are included in the calculation. The calculated vertical-bar chi$sub 14$$sup 2$/sup 2omega//sup //sup vertical-bar/with the k- dependent dipole matrix elements give much better agreement with the available experimental data than the results of constant matrix elements, which, in turn, show more structure than the ones calculated by Bell. In the case of InSb, there are two structures at 1.6 and 1.8 eV due to double resonances. A simplified model to predict structure in vertical-bar chi$sub 14$$sup 2$/sup 2omega//sup // sup vertical-bar/from the linear spectrum is discussed.
- Research Organization:
- Department of Physics, University of California, Davis, California 95616
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-33-001128
- OSTI ID:
- 4839928
- Journal Information:
- Physical Review, B: Solid State, Vol. 12, Issue 6; Other Information: Orig. Receipt Date: 30-JUN-76; ISSN 0556-2805
- Country of Publication:
- United States
- Language:
- English
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