Cubic SiC: The forgotten polytype

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:470926

Jayatirtha, H N; Spencer, M G ^[1]

---

1. Howard Univ., Washington, DC (United States)

The two most common and most studied forms of SiC are 6H-SiC and 3C-SiC. The 3C-SiC, or cubic modification shares the zincblend lattice structure with other well developed semiconductor materials, such as GaAs and InP. The authors have grown thick 3C-SiC by the sublimation method. Their results show that it is possible to maintain the 3C polytype even at growth temperatures of 2,000 C. Using the sublimation technique they have obtained growth rates as high as 130 microns/hr.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 470926
• Report Number(s): CONF-951155-; ISBN 1-55899-313-4; TRN: IM9722%%49
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Covalent ceramics III -- Science and technology of non-oxides; Hepp, A.F. [ed.] [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center]; Kumta, P.N. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Sullivan, J.J. [ed.] [MKS Instruments, Andover, MA (United States)]; Fischman, G.S. [ed.] [Food and Drug Administration, Rockville, MD (United States)]; Kaloyeros, A.E. [ed.] [Univ. of Albany, NY (United States)]; PB: 499 p.; Materials Research Society symposium proceedings, Volume 410
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
SILICON CARBIDES
SUBLIMATION
CUBIC LATTICES
POWDERS
EVAPORATION
TEMPERATURE RANGE 1000-4000 K
NUCLEATION
CRYSTAL DEFECTS
RAMAN SPECTRA
PHOTOLUMINESCENCE
CARRIER DENSITY
EXPERIMENTAL DATA