High-power CW operation of AlGaInP laser-diode array at 640 nm
Journal Article
·
· IEEE Photonics Technology Letters
- Lawrence Livermore National Lab., CA (United States)
- Xerox Palo Alto Research Center, CA (United States)
Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 46102
- Journal Information:
- IEEE Photonics Technology Letters, Vol. 7, Issue 2; Other Information: PBD: Feb 1995
- Country of Publication:
- United States
- Language:
- English
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