Pixel x-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experiment determination)

Journal Article · Sat Feb 01 00:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.554815· OSTI ID:452155

Bertuccio, G; Pullia, A ^[1]; Lauter, J; Foerster, A; Luth, H ^[2]

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1. Politecnico di Milano (Italy). Dipt. di Elettronica e Informazione
2. Forschungszentrum Juelich (Germany). Inst. fuer Schicht und Ionentechnik

Gallium Arsenide pixel detectors with an area of 170 x 320 {micro}m{sup 2} and thickness of 5 {micro}m, realized by molecular beam epitaxy, have been designed and tested with X- and {gamma} rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the K{sub {alpha}} and K{sub {beta}} lines of the {sup 55}Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F = 0.12 {+-} 0.01.

• OSTI ID: 452155
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 44, Issue 1; Other Information: PBD: Feb 1997
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SEMICONDUCTOR DETECTORS
GAMMA DETECTION
X-RAY DETECTION
DESIGN
PERFORMANCE TESTING
FANO FACTOR
MOLECULAR BEAM EPITAXY