InAsSbP/InAsSb/InAs laser diodes ({lambda}=3.2 {mu}m) grown by low-pressure metal{endash}organic chemical-vapor deposition

Journal Article · Wed Jan 01 00:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119298· OSTI ID:435081

Diaz, J; Yi, H; Rybaltowski, A; Lane, B; Lukas, G; Wu, D; Kim, S; Erdtmann, M; Kaas, E; Razeghi, M ^[1]

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1. Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)

We report metal{endash}organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 {mu}m operating at temperatures up to 220 K with threshold current density of 40 A/cm{sup 2} at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 {mu}m stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 435081
• Journal Information: Applied Physics Letters, Vol. 70, Issue 1; Other Information: PBD: Jan 1997
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
CHEMICAL VAPOR DEPOSITION
INDIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM ANTIMONIDES
HETEROJUNCTIONS
THRESHOLD CURRENT
PULSES
TEMPERATURE DEPENDENCE
SEMICONDUCTOR DIODES