Significance of microstructure for a MOCVD-grown YSZ thin film gas sensor

Conference · Fri Nov 01 00:00:00 EST 1996

OSTI ID:432890

Vetrone, J; Foster, C; Bai, G ^[1]

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1. Argonne National Lab., IL (United States). Material Science Div.

The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 432890
• Report Number(s): ANL/MSD/CP-86864; CONF-951155-124; ON: DE97001224; TRN: AHC29704%%5
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: Nov 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ZIRCONIUM OXIDES
YTTRIUM OXIDES
MICROSTRUCTURE
MONITORS
GASES
SOLID ELECTROLYTES
TEXTURE
LEAKAGE CURRENT
RESPONSE FUNCTIONS
IONIC CONDUCTIVITY