The effect of plasma conditions on reactive ion etching of GaAs in Cl{sub 2}/Ar
- UNICAMP, Campinas, Sao Paulo (Brazil). Inst. of Physics
The parameters of plasma used for GaAs/Cl{sub 2} RIE were studied by means of emission spectroscopy. The different behavior was observed for different types of emitting species. For main plasma species non-monotonical dependence of emission intensity on discharge power P was found, with fast fall of emission for P > 50 Watts. For some of the etch products observed near the electrode, i.e. Al, Si, SiCl, and Ga, the emission intensity increased rapidly with P. The GaAs etch rate showed the same power dependence as the main plasma species. The similar behavior of Ar line emission proves, that the observed effect can not be attributed to the depletion of reagents in plasma. The fall of the etch rate E{sub etch} with P was accompanied by the remarkable changes in the other etching properties: the sample surface changed from smooth to rough, both the anisotropy factor and photoresist removal rates decreased, in spite of the substantial rise of the self-bias. The observed features of GaAs RIE have been explained on the basis of a model, including chemical and ion-stimulated components of the process.
- OSTI ID:
- 419688
- Report Number(s):
- CONF-960634-; TRN: IM9706%%232
- Resource Relation:
- Conference: 1996 IEEE international conference on plasma science, Boston, MA (United States), 3-5 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of IEEE conference record -- Abstracts: 1996 IEEE international conference on plasma science; PB: 324 p.
- Country of Publication:
- United States
- Language:
- English
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