skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Development of Cu(InGa)Se{sub 2} thin film solar cells with Cd-free buffer layers

Book ·
OSTI ID:417671

Cu(InGa)Se{sub 2}(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, In{sub x}Se{sub y} and ZnIn{sub x}Se{sub y} and ZnIn{sub x}Se{sub y} buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/In{sub x}Se{sub y}/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.

OSTI ID:
417671
Report Number(s):
CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%44
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
Country of Publication:
United States
Language:
English