Recognition and recombination strength evaluation by LBIC of dislocations in FZ and Cz silicon wafers
- Lab. de Photoelectricite des Semiconducteurs, Marseille (France)
In the present work, dislocation networks are investigated in Czochralski (Cz) and in float zone (FZ) grown silicon wafers by the Light Beam Induced Current (LBIC) mapping technique at different wavelengths, which appears to be able to recognize and to detect these networks and to evaluate their recombination strength. Dislocations are found to be more recombining in Cz than in FZ. It is shown that in Cz wafers, a four hours phosphorus diffusion at 900{degrees}C, realized before dislocations creation, impedes the formation of oxygen precipitates during subsequent annealings. In FZ dislocated wafers, a phosphorus diffusion at 850{degrees}C for 30 min cancels the LBIC contrast of dislocations. Electrical activity of these defects which are still physically present as shown by X-Ray topography, seems to disappear.
- OSTI ID:
- 405527
- Report Number(s):
- CONF-951231-; TRN: 96:005795-0023
- Resource Relation:
- Conference: 6. conference on defect recognition and image processing in semiconductors, Estes Park, CO (United States), 3-6 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Defect recognition and image processing in semiconductors 1995; Mickelson, A.R. [ed.]; PB: 380 p.
- Country of Publication:
- United States
- Language:
- English
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