Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

Journal Article · Mon Sep 03 00:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1400761· OSTI ID:40277676

Bhattacharyya, S; Auciello, O; Birrell, J; Carlisle, J A; Curtiss, L A; Goyette, A N; Gruen, D M; Krauss, A R; Schlueter, J; Sumant, A ^[1]

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1. and others

Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH{sub 4}(1%)/Ar gas mixture and 1%--20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 {Omega}-1 cm-1) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• Sponsoring Organization: (US)
• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 40277676
• Journal Information: Applied Physics Letters, Vol. 79, Issue 10; Other Information: DOI: 10.1063/1.1400761; Othernumber: APPLAB000079000010001441000001; 032136APL; PBD: 3 Sep 2001; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DIAMONDS
ELECTRIC CONDUCTIVITY
MIXTURES
NITROGEN
SYNTHESIS
THIN FILMS
TRANSPORT