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Title: Mechanisms responsible for the ultraviolet photosensitivity of SnO{sub 2}-doped silica

Journal Article · · Physical Review B

Tin-doped silica samples were prepared by the sol-gel method. Optical absorption and electron paramagnetic resonance measurements were carried out before and after exposure to 266-nm pulsed radiation from the fourth harmonic of the Nd-YAG (yttrium-aluminum-garnet) laser. The laser-induced change of refractive index was analyzed at different power densities (from 1 to 6 x 10{sup 7}W/cm{sup 2}, 6-ns pulse duration) and exposure times. Positive changes of the refractive index up to 4 x 10{sup -4} were observed. The presence and the consequent laser-induced bleaching of the 5-eV absorption band due to oxygen deficient centers, does not appear relevant, since good positive photosensitivity was observed in samples without detectable absorption at this energy.

Sponsoring Organization:
(US)
OSTI ID:
40230824
Journal Information:
Physical Review B, Vol. 64, Issue 7; Other Information: DOI: 10.1103/PhysRevB.64.073102; Othernumber: PRBMDO000064000007073102000001; 026131PRB; PBD: 15 Aug 2001; ISSN 0163-1829
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English