Transient characteristics of Al{sub x}Ga{sub 1-x}N/GaN heterojunction field-effect transistors
Transient characteristics of drain-source current in response to picosecond pulsed gate-source voltages in Al{sub x}Ga{sub 1-x}N/GaN heterojunction field-effect transistors (HFETs) have been measured. It was found that the switching time constants were of the order of tens of picoseconds and depended strongly on the gate-source bias V{sub GS} as well as drain-source bias V{sub DS}. Slow transients caused by charge trapping effects such as those observed in AlGaAs/GaAs HFETs were absent in AlGaN/GaN HFETs. Our results suggested that the dependence of the effective electron mobility on the sheet density dictates the overall drain current transient characteristics as well as the device switching speed of AlGaN/GaN HFETs.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205329
- Journal Information:
- Applied Physics Letters, Vol. 77, Issue 24; Other Information: DOI: 10.1063/1.1332412; Othernumber: APPLAB000077000024004046000001; 012051APL; PBD: 11 Dec 2000; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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