Fabrication and characteristics of submicron tunneling junctions on high T{sub c} superconducting c-axis thin films and single crystals
We report successful fabrication and characteristics of submicron-size tunneling junctions using c-axis YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (YBCO) thin films of 800 nm thickness and Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}(Bi-2212) single-crystal whiskers. The junctions were made using a three-dimensional focused-ion-beam etching method. First, a microbridge was patterned in a required junction width by normal direction etching. By tilting the sample stage up to 90{degree}, two grooves on the bridge were etched from the lateral direction in order to create the required junction size. The 60 K YBCO junctions did not show any degradation of critical current density (J{sub c}) down to an in-plane area of 0.5 {mu}m2 and showed current{endash}voltage (I{endash}V) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 {mu}m2, we identified some of the features of charging effects on the I{endash}V characteristics. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204158
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1361267; Othernumber: JAPIAU000089000011007675000001; 472111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strong temperature dependence of the {ital c}-axis gap parameter of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} intrinsic Josephson junctions
An ion-beam-assisted process for high-T{sub c} Josephson junctions