Characteristics of n{sup +} polycrystalline-Si/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash} semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor
We report interface and dielectric reliability characteristics of n{sup +} polycrystalline-silicon (poly-Si)/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash}semiconductor (MOS) capacitors. Al{sub 2}O{sub 3} films were prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. Interface state density (D{sub it}) and dielectric reliability properties of n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS structures were examined by capacitance{endash}voltage, conductance, current{endash}voltage, and time-dependent dielectric breakdown measurements. The D{sub it} of the n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS system near the Si midgap is approximately 8{times}10{sup 10}eV{sup {minus}1}cm{sup {minus}2} as determined by the conductance method. Frequency dispersion as small as {similar_to}20 mV and hysteresis of {similar_to}15 mV were attained under the electric field of {+-}8 MV/cm. The gate leakage current of {similar_to}36 Aa effective thickness Al{sub 2}O{sub 3} dielectric measured at the gate voltage of {minus}2.5 V is {similar_to}{minus}5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO{sub 2}). Time-dependent dielectric breakdown data of Al{sub 2}O{sub 3}/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al{sub 2}O{sub 3} gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al{sub 2}O{sub 3}/Si junction are discussed. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203754
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1368869; Othernumber: JAPIAU000089000011006275000001; 071111JAP; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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