Reply to {open_quotes}Comment on {open_quote}Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms{close_quote}{close_quotes}
Journal Article
·
· Physical Review B
We have investigated atomic diffusion properties near the amorphous/crystalline (a/c) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Aa at the a/c interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203560
- Journal Information:
- Physical Review B, Vol. 63, Issue 23; Other Information: DOI: 10.1103/PhysRevB.63.237402; Othernumber: PRBMDO000063000023237402000001; 010124PRB; PBD: 15 Jun 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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