Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance
A series of experimental data was obtained systematically for a spin-valve-type tunnel junction of Ta(5nm)/Ni{sub 79}Fe{sub 21} (3 nm)/Cu (20nm)/Ni{sub 79}Fe{sub 21} (3nm)/Ir{sub 22}Mn{sub 78}(10nm)/Co{sub 75}Fe{sub 25} (4 nm)/Al (0.8nm)-oxide/Co{sub 75}Fe{sub 25} (4nm)/Ni{sub 79}Fe{sub 21} (20 nm)/Ta (5 nm). Analyses of (i) temperature dependence of tunnel magnetoresistance (TMR) ratio and resistance from 4.2 K to room temperature, (ii) applied dc bias-voltage dependence of TMR ratio and resistance at 6.0 K and room temperature, and (iii) tunnel current I and dynamic conductance (dI/dV) as functions of dc bias voltage at 6.0 K were carried out. High-TMR ratio of 64.7% at 4.2 K and 44.2% at room temperature were observed for this junction after annealing at 300{degree}C for an hour. An anisotropic wavelength cutoff energy of spin-wave spectrum in magnetic tunnel junctions, which is essential for self-consistent calculations, was suggested based on a series of inelastic electron tunnel spectra obtained. The main intrinsic magnetoelectric properties in such spin-valve-type tunnel junction with high magnetoresistance and low resistance can be evaluated based on the magnon-assisted inelastic excitation model and theory.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203460
- Journal Information:
- Physical Review B, Vol. 63, Issue 22; Other Information: DOI: 10.1103/PhysRevB.63.224404; Othernumber: PRBMDO000063000022224404000001; 020122PRB; PBD: 1 Jun 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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