Thermal oxide of polycrystalline silicon on steel foil as a thin-film transistor gate dielectric
The gate dielectric of polycrystalline silicon thin-film transistors on steel foil substrates was grown by direct thermal oxidation. The silicon dioxide was formed on the polysilicon channel layer by dry oxidation for 40 min at 950{degree}C. Self-aligned sources and drains were ion implanted. The thin-film transistors have electron mobilities of {similar_to}30 cm{sup 2}{center_dot}V{sup {minus}1}s{sup {minus}1} in both the linear and saturated regimes, off currents of 35 pA/{mu}m, and on/off current ratios of {similar_to} 10{sup 6}. The thin-film transistors function even though they are processed at 950{degree}C separated from steel by only 0.5 {mu}m of SiO{sub 2}, and at room temperature may be under compressive strain as high as 1%. The implementation of conventional high-temperature fabrication techniques makes polycrystalline silicon on steel foil a strong contender for flexible electronic backplanes. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203208
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 23; Other Information: DOI: 10.1063/1.1377319; Othernumber: APPLAB000078000023003729000001; 011123APL; PBD: 4 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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