Combined method of electron-beam lithography and ion implantation techniques for the fabrication of high-temperature superconductor Josephson junctions
- Institut fuer Halbleitertechnik, Lehrstuhl II, Rheinisch-Westfaelische Technische Hochschule (RWTH), Aachen, Sommerfeldstrasse 24, D-52074 Aachen (Germany)
Established semiconductor process technologies are demonstrated to be suitable for the fabrication of high temperature superconductor Josephson junctions. Single YBa{sub 2}Cu{sub 3}O{sub 7} bridges have been modified by local oxygen ion irradiation through a narrow slit in an implantation mask, which was formed by electron-beam lithography and reactive ion etching. The influence of the slit dimension, the mask thickness, and the irradiation dose have been investigated systematically. The critical current and the normal resistance of the modified microbridges were found to be controllable by these parameters achieving a great variety of different {ital I}/{ital V} curves, i.e., resistive or superconductor/normal/superconductor (SNS) Josephson junction behavior. Further investigations were performed on SNS junctions. Microwave irradiation of the microbridges exhibits Shapiro steps in the {ital I}/{ital V} characteristics. In dc superconducting quantum interference devices a voltage modulation as a function of an applied magnetic flux is observed. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 399800
- Report Number(s):
- CONF-960582-; ISSN 0734-211X; TRN: 96:030070
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 6; Conference: 40. international conference on electron, ion and photon beam technology and nanofabrication, Atlanta, GA (United States), 28-31 May 1996; Other Information: PBD: Nov 1996
- Country of Publication:
- United States
- Language:
- English
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