Thermal stability of ohmic contacts to n-In{sub x}Ga{sub 1{minus}x}N

Conference · Fri Nov 01 00:00:00 EST 1996

OSTI ID:395038

Durbha, A; Pearton, S J; Abernathy, C R; Lee, J W; Holloway, P H ^[1]; Ren, F ^[2]

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1. Univ. of Florida, Gainesville, FL (United States)
2. AT and T Bell Labs., Murray Hill, NJ (United States)

The microstructural properties and interdiffusion reactions of Au/Ge/Ni, Ti/Pt/Au, WSi{sub x} and AuBe contacts on GaN and In{sub 0.5}Ga{sub 0.5}N have been examined using Scanning Electron Microscopy and Auger Electron Spectroscopy. The WSi{sub x} contacts possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800 C on GaN. The electrical characteristics of WSi{sub x} contacts on In{sub 0.5}Ga{sub 0.5}N had a specific contact resistivity of 1.48 {times} 10{sup {minus}5} {Omega}cm{sup 2} and an excellent surface morphology following annealing at 700 C. The increase in contact resistance observed at higher temperatures was attributed to intermixing of metal and semiconductor. In contrast the Ti/Pt/Au and Au/Ge/Ni contacts were stable only to {le} 500 C. AuBe contacts had the poorest thermal stability, with substantial reaction with GaN occurring even at 400 C. The WSi{sub x} contact appears to be an excellent choice for high temperature GaN electronics applications.

• OSTI ID: 395038
• Report Number(s): CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%115
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
COMPOSITE MATERIALS
FABRICATION
INTERFACES
INDIUM NITRIDES
GALLIUM NITRIDES
GOLD
GERMANIUM
NICKEL
TITANIUM
PLATINUM
TUNGSTEN
SILICON
BERYLLIUM
MICROSTRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
MOLECULAR BEAM EPITAXY
PLASMA
GALLIUM ARSENIDES
ELECTRIC CONTACTS
EVAPORATION
SPUTTERING
ANNEALING
SCANNING ELECTRON MICROSCOPY
AUGER ELECTRON SPECTROSCOPY