Optoelectronic and structural properties of high-quality GaN grown by hydride vapor phase epitaxy
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Xerox Palo Alto Research Center, CA (United States)
Gallium nitride (GaN) films have been grown by hydride vapor phase epitaxy (HVPE) in a vertical reactor design. The authors report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably with the highest values reported in the literature for GaN. Specifically, a room temperature Hall mobility as high as 540 cm{sup 2}/V{center_dot}s, with a corresponding carrier concentration of 2 {times} 10{sup 17} cm{sup {minus}3}, have been attained. Additionally, the vertical reactor design has assisted in reducing nonuniformities in both film thickness as well as in transport properties due to depletion effects, as compared with horizontal designs. The dislocation density in these films has been determined by plan-view transmission electron microscopy to be {approximately} 3 {times} 10{sup 8} cm{sup {minus}2}. Photoluminescence spectra obtained at 2 K show intense, sharp, near-band edge emission with minimal deep level emissions.Stimulated emission has been observed in these films, utilizing a nitrogen laser pump source ({lambda} = 337.1 nm) with a threshold pump power of {approximately} 0.5 MW/cm{sup 2}. These results suggest that HVPE is viable for the growth of high-quality nitride films, particularly for the subsequent homoepitaxial overgrowth of device structures by other growth methods such as OMVPE and MBE.
- OSTI ID:
- 394950
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%27
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
LIGHT EMITTING DIODES
MATERIALS
SUBSTRATES
SAPPHIRE
GALLIUM CHLORIDES
ZINC OXIDES
HALL EFFECT
CARRIER DENSITY
PHOTOLUMINESCENCE
STIMULATED EMISSION
DISLOCATIONS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ELECTRON DIFFRACTION
INTERFACES