Homo and heteroepitaxial growth of LiTaO{sub 3} and LiNbO{sub 3} by MBE

Conference · Fri Nov 01 00:00:00 EST 1996

OSTI ID:392168

Sitar, Z; Liu, W ^[1]; Gitmans, F; Guenter, P ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
2. ETH Zuerich (Switzerland)

Thin films and superlattices of LiTaO{sub 3} and LiNbO{sub 3} were grown on (0001) LiTaO{sub 3} and LiNbO{sub 3} wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900 C. Films were c-axis oriented but showed in-plane 60{degree} rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO{sub 3}. It showed well defined interfaces and appeared to be strained.

• OSTI ID: 392168
• Report Number(s): CONF-951155-; ISBN 1-55899-304-5; TRN: 96:028528
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Epitaxial oxide thin films 2; Speck, J.S. [ed.] [Univ. of California, Santa Barbara, CA (United States)]; Fork, D.K. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Wolf, R.M. [ed.] [Philips Research Labs., Briarcliff Manor, NY (United States)]; Shiosaki, Tadashi [ed.] [Kyoto Univ. (Japan)]; PB: 577 p.; Materials Research Society symposium proceedings, Volume 401
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LITHIUM OXIDES
ENERGY BEAM DEPOSITION
MICROSTRUCTURE
TANTALUM OXIDES
NIOBIUM OXIDES
MOLECULAR BEAM EPITAXY
ELECTRON BEAMS
PLASMA
X-RAY SPECTROSCOPY
PHOTOELECTRON SPECTROSCOPY
AUGER ELECTRON SPECTROSCOPY
ELECTRON DIFFRACTION
OXIDATION
ORIENTATION
X-RAY DIFFRACTION
TRANSMISSION ELECTRON MICROSCOPY
INTERFACES