High power excimer laser-generated plasma source for x-ray microlithography
- JMAR Technology Co., San Diego, CA (United States)
- Rutherford Appleton Lab., Chilton (United Kingdom)
- IBM Microelectronics, Hopewell Junction, NY (United States)
- Naval Research Lab., Washington, DC (United States)
- SFA, Inc., Landover, MD (United States)
This paper describes a high-intensity, high pulse-repetition-rate picosecond-pulse excimer laser system and plasma x-ray source, which generates up to 3 W of average x-ray power, into 2{pi} steradians, in a spectral band from 10--16 {angstrom}. The XeCl excimer laser system output, at 308 nm, consists of a train of 16 pulses, each {approximately}45 ps in duration and spaced by 2 ns. The energy of each pulse in the train is {approximately}25 mJ, and the pulse-train repetition rate is 60 Hz. Each pulse in the train is focused to a spot of <10 {micro}m diameter on a metal tape target, resulting in an intensity of 1 {times} 10{sup 15} W cm{sup {minus}2}. Spectral and spatial characteristics of the x-ray emission have been studied, and the laser energy to x-ray dose conversion efficiency has been measured in an experiment which simulates the x-ray lithography process. Lithographic efficiencies of 5.9% and 10.9% have been measured for copper and stainless steel targets, respectively.
- OSTI ID:
- 379736
- Report Number(s):
- CONF-9507222-; ISBN 0-8194-1882-X; TRN: 96:025248
- Resource Relation:
- Conference: SPIE applications of laser plasma radiation II, San Diego, CA (United States), 12-14 Jul 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of laser plasma radiation 2; Richardson, M.C.; Kyrala, G.A. [eds.]; PB: 333 p.; Proceedings/SPIE, Volume 2523
- Country of Publication:
- United States
- Language:
- English
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