Composition and structure of zirconium nitride films produced by ion assisted deposition
- Univ. of Salford (United Kingdom). Centre for Thin Film and Surface Research
- MATS, Liverpool (United Kingdom)
The growth mechanism of ZrN{sub x} films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300--680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0--60 at.%, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes 1--15 nm which depend on the nitrogen content and the deposition temperature.
- OSTI ID:
- 375926
- Report Number(s):
- CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%14
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
- Country of Publication:
- United States
- Language:
- English
Similar Records
Mechanical and tribological properties of chromium-nitrogen films deposited by ion beam assisted deposition
Ion beam reactive sputter-deposition of silicon and zirconium oxides