Preparation of a-Si:H and a-SiGe:H nip cells at high rates using a 70 MHz VHF PECVD technique
- Energy Conversion Devices, Inc., 1675 W. Maple Rd., Troy, Michigan 48084 (United States)
A 70 MHz Very High Frequency (VHF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique has been used to prepare i-layers for small area, single-junction a-Si:H and a-SiGe:H nip cells and triple-junction devices at deposition rates as high as 10 {Angstrom}/s. For both the a-Si:H and a-SiGe:H single-junction cells under optimized deposition conditions, the efficiencies and the light stability remain relatively constant as the i-layer deposition rate is varied from 1 to 10 {Angstrom}/s. Also the stable efficiencies for both types of cells are similar to those for similar cells made in the same deposition system at low deposition rates (1 {Angstrom}/s) using the standard 13.56 MHz PECVD technique. Triple-junction a-Si:H/a-SiGe:H/a-SiGe:H cells have been fabricated using the VHF technique to prepare all of the i-layers at deposition rates near 10 {Angstrom}/s. These devices have pre-light soaked active area efficiencies between 9.5 and 10{percent} and total area efficiencies between 9.0 and 9.5{percent}. Considering these results, the VHF method is a promising technique to increase the growth rate of i-layers for a-Si:H based devices, and when applied to the production of large area a-Si:H based multi-junction solar modules, it will allow for higher manufacturing throughput and reduced module cost. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 355382
- Report Number(s):
- CONF-980935-; ISSN 0094-243X; TRN: 9915M0049
- Journal Information:
- AIP Conference Proceedings, Vol. 462, Issue 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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