Junction formation in CuInSe{sub 2}-based thin-film devices
- National Center for Photovoltaics, National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2{percent} efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions. {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 355356
- Report Number(s):
- CONF-980935-; ISSN 0094-243X; TRN: 9915M0005
- Journal Information:
- AIP Conference Proceedings, Vol. 462, Issue 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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