Method of improving field emission characteristics of diamond thin films
Patent
·
OSTI ID:350330
A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.
- Research Organization:
- Univ. of Chicago, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- Univ. of Chicago, IL (United States)
- Patent Number(s):
- US 5,902,640/A/
- Application Number:
- PAN: 8-684,426
- OSTI ID:
- 350330
- Resource Relation:
- Other Information: PBD: 11 May 1999
- Country of Publication:
- United States
- Language:
- English
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