Postdeposition reduction of noble metal doped ZnO films
- Pacific Northwest National Laboratory, POB 999, MS K2-44, Richland, Washington 99352-1611 (United States)
Insulating ZnO (wurtzite phase) films containing 1{percent} to 2{percent} Pt, Au, Pd, Ga, or Al dopants have been deposited onto silica, silicon, and aluminum substrates under oxidizing conditions. Substantial enhancement in film conductivity is promoted by postdeposition reduction in hydrogen above a critical temperature or by room temperature cathodic reduction in an electrochemical cell. Film reduction requires the presence of atomic hydrogen, formed at the film surface either by dissociative adsorption of gaseous H{sub 2} or its electrochemical generation from a buffered aqueous solution. As deposited and reduced films have been characterized using x-ray photoemission spectroscopy, Raman spectroscopy, optical transmission measurements, spectroscopic ellipsometry, voltammetry, chronopotentiometry, and four-point conductivity measurements. Results indicate that film deposition parameters and postdeposition reduction alter the oxidation states of both the zinc and the resident dopant cations. The zinc reduction reaction appears to be quasireversible while the reduced noble metal dopants in the films are not prone to reoxidation. These results may have implications for enhancing stability of the optical response and electrical conductivity exhibited by these films. {copyright} {ital 1998 American Vacuum Society.}
- OSTI ID:
- 342646
- Report Number(s):
- CONF-971029-; ISSN 0734-2101; TRN: 9811M0044
- Journal Information:
- Journal of Vacuum Science and Technology, A, Vol. 16, Issue 3; Conference: 44. national symposium of the American Vacuum Society, San Jose, CA (United States), 20-24 Oct 1997; Other Information: PBD: May 1998
- Country of Publication:
- United States
- Language:
- English
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