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Title: Characterization of RF plasma cleaning protocols for removal of contaminants in high voltage beam diodes

Conference ·
OSTI ID:338512
; ; ; ; ; ;  [1]; ;  [2]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Intense Energy Beam Interaction Lab.
  2. Sandia National Labs., Albuquerque, NM (United States). Intense Beam Research Dept.

Contaminants have been shown to be a contributing factor to parasitic losses in ion beam diodes. Probable primary contaminants are CO, CO{sub 2}, H{sub 2}O, H{sub 2}, and C{sub n}H{sub m} complexes. Experiments are underway at the University of Michigan to characterize effective cleaning protocols for high voltage A-K Gaps. RF cleaning techniques using Ar and Ar/O{sub 2} mixtures are being investigated. Optical emission spectroscopy is being used to view the effects of cleaning on neutral and ion contaminants during the high voltage diode pulse and to characterize the cleaning discharge. Experiments utilize the Michigan Electron Long Beam Accelerator (MELBA) at parameters: V = {minus}0.7 to {minus}1.0 MV, I{sub diode} = 1--10 kA, and {tau}{sub e-beam} = 0.4--1.0{micro}s. MELBA is used to study thermal and stimulated desorption of contaminants from A-K surfaces due to electron deposition. Pre-analysis and post-analysis of contaminants (e.g., CO, CO{sub 2}, H{sub 2}O, H{sub 2}, C{sub n}H{sub m}) is performed using a residual gas analyzer.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States); Sandia National Labs., Albuquerque, NM (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
338512
Report Number(s):
CONF-970559-; TRN: 99:005813
Resource Relation:
Conference: 24. IEEE international conference on plasma science, San Diego, CA (United States), 19-23 May 1997; Other Information: PBD: 1997; Related Information: Is Part Of IEEE conference record -- Abstracts; PB: 354 p.
Country of Publication:
United States
Language:
English